Monolithic 3D CMOS Using Layered Semiconductors.
نویسندگان
چکیده
Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications.
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ورودعنوان ژورنال:
- Advanced materials
دوره 28 13 شماره
صفحات -
تاریخ انتشار 2016